The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Oct. 15, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Po-Cheng Shih, Hsin Chiu, TW;
Hui-Chun Yang, Hsinchu, TW;
Chung-Chi Ko, Nantou, TW;
Kuang-Yuan Hsu, Taichung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
One embodiment is a method for semiconductor processing. In this method, a precursor film is provided over a semiconductor substrate, where the precursor film is made of a structural former and porogen. Prior to cross-linking, the porogen is removed by exposure to UV radiation having one or more wavelengths in the range of 150 nm to 300 nm, while a temperature of 300° C. to 500° C. is applied to the semiconductor substrate. Meanwhile, a Argon:Helium flow rate of 80>Ar>10 slm, 80>He>10 slm is set for the ambient substrate environment where the ratio of Ar:He ranges from 0:1 to 1:0 by volume or molality.