The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
Sep. 08, 2011
Shich-chang Suen, Hsin-Chu, TW;
Liang-guang Chen, Hsin-Chu, TW;
He Hui Peng, Changhua, TW;
Wne-pin Peng, Zhubei, TW;
Shwang-ming Jeng, Hsin-Chu, TW;
Shich-Chang Suen, Hsin-Chu, TW;
Liang-Guang Chen, Hsin-Chu, TW;
He Hui Peng, Changhua, TW;
Wne-Pin Peng, Zhubei, TW;
Shwang-Ming Jeng, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes forming an etch stop layer over and contacting a gate electrode of a transistor, forming a sacrificial layer over the etch stop layer, and etching the sacrificial layer, the etch stop layer, and an inter-layer dielectric layer to form an opening. The opening is then filled with a metallic material. The sacrificial layer and excess portions of the metallic material over a top surface of the etch stop layer are removed using a removal step including a CMP process. The remaining portion of the metallic material forms a contact plug.