The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Mar. 15, 2010
Kuan-chen Wang, Hsin-Chu, TW;
Po-cheng Shih, Hsin Chiu, TW;
Chung-chi Ko, Nantou, TW;
Keng-chu Lin, Ping-Tung, TW;
Shwang-ming Jeng, Hsin-Chu, TW;
Kuan-Chen Wang, Hsin-Chu, TW;
Po-Cheng Shih, Hsin Chiu, TW;
Chung-Chi Ko, Nantou, TW;
Keng-Chu Lin, Ping-Tung, TW;
Shwang-Ming Jeng, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
In the formation of an interconnect structure, a metal feature is formed in a dielectric layer. An etch stop layer (ESL) is formed over the metal feature and the dielectric layer using a precursor and a carbon-source gas including carbon as precursors. The carbon-source gas is free from carbon dioxide (CO). The precursor is selected from the group consisting essentially of 1-methylsilane (1MS), 2-methylsilane (2MS), 3-methylsilane (3MS), 4-methylsilane (4MS), and combinations thereof.