Nirasaki, Japan

Shintaro Aoyama

This inventor holds 15 USPTO granted patents and 2 published patent applications and 1 EPO patent, primarily in Semiconductor Processing. Top assignees: Tokyo Electron Limited, Tokyo Electron Limi Ted. Active years: 2002-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shintaro Aoyama. Retrieved from https://idiyas.com/inventor/shintaro-aoyama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 15 

% Patents Active = 66.7


Average Co-Inventor Count = 3.5

ph-index = 7

Forward Citations = 170(Granted Patents)


Location History:

  • Yamanashi, JP (2002)
  • Nirasaki, JP (2003 - 2016)
  • Fuchu, JP (2020 - 2021)

Company Filing History:


Years Active: 2002-2021

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Areas of Expertise:
Tungsten Film
Low Resistance
High-K Dielectric
Substrate Treatment
Plasma Ignition
Insulating Film
Dielectric Film
Stacked Gate
Radical Processing
Oxide Film Removal
Semiconductor Device
Substrate Processing
15 patents (USPTO):Explore Patents

Title: Shintaro Aoyama: Innovator in Tungsten Film Technology

Introduction

Shintaro Aoyama, based in Nirasaki, Japan, is a renowned inventor with a significant contribution to the field of semiconductor technologies. With a remarkable portfolio of 15 patents, Aoyama's work focuses primarily on the development of methods for forming tungsten films, which are crucial for numerous applications in electronics and advanced materials.

Latest Patents

Aoyama's latest patents include innovative methods for forming tungsten films that exhibit low resistance. One such patent describes a procedure involving the formation of a discontinuous film containing a metal on a substrate, followed by the deposition of a tungsten film. This method alternates the supply of a first source gas and a nitriding gas along with a carrier gas to achieve optimal film characteristics.

Another patent elaborates on a two-step tungsten film formation process, where a first tungsten film is laid down on the substrate before a second tungsten film is deposited atop it. This method utilizes a combination of raw material gases and carrier gases in a specific flow configuration to enhance film quality. The first carrier gas used is nitrogen, while the second carrier gas includes noble gases at substantial flow rates to ensure high-performance outcomes in the films produced.

Career Highlights

Aoyama has established a strong career in the technology sector, notably with his tenure at Tokyo Electron Limited, a leading company in semiconductor manufacturing equipment. His work at Tokyo Electron has contributed significantly to advancements in the field, particularly in tungsten film technologies that improve electrical conductivity and performance.

Collaborations

Throughout his career, Shintaro Aoyama has collaborated with notable professionals such as Hiroshi Shinriki and Masanobu Igeta. These partnerships have fostered an environment of innovation and have led to significant advancements in the development and application of tungsten films in various technologies.

Conclusion

Shintaro Aoyama continues to be a leading figure in the field of semiconductor technology, with his innovative methods for tungsten film formation playing a vital role in enhancing electronic components. His contributions not only impact the industry but also set the stage for further advancements in material science and engineering.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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