The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Sep. 14, 2000
Hideki Kiryu, Nirasaki, JP;
Shintaro Aoyama, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A stacked gate insulating film comprises a silicon oxide film and a tantalum oxide film which is stacked on the silicon oxide film and whose dielectric constant is higher than a dielectric constant of the silicon oxide film. The stacked gate insulating film is formed in accordance with the following steps. A semiconductor wafer is heated up, and the surface thereof is heat-oxidized. The silicon oxide film is formed on the semiconductor wafer (heat oxidation process). The silicon oxide film is etched back so as to be made thin (etch back process). The tantalum oxide film is stacked on the thin silicon oxide film (dielectric film formation process), thereby to form the stacked gate insulating film.