The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Apr. 25, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Koji Maekawa, Nirasaki, JP;

Takashi Sameshima, Nirasaki, JP;

Shintaro Aoyama, Fuchu, JP;

Mikio Suzuki, Nirasaki, JP;

Susumu Arima, Nirasaki, JP;

Atsushi Matsumoto, Nirasaki, JP;

Naoki Shibata, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); C23C 16/455 (2006.01); C23C 16/02 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); C23C 16/08 (2006.01); C23C 16/14 (2006.01); C23C 16/04 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45525 (2013.01); C23C 16/0281 (2013.01); C23C 16/045 (2013.01); C23C 16/08 (2013.01); C23C 16/14 (2013.01); C23C 16/45527 (2013.01); H01L 21/28556 (2013.01); H01L 21/28562 (2013.01); H01L 21/76876 (2013.01); H01L 21/76877 (2013.01);
Abstract

There is provided a tungsten film forming method which includes: forming a first tungsten film on a substrate; and forming a second tungsten film on the first tungsten film. The forming a first tungsten film includes alternately supplying a first raw material gas containing tungsten and a diborane gas together with a first carrier gas to the substrate. The forming a second tungsten film includes alternately supplying a second raw material gas containing tungsten and a hydrogen gas together with a second carrier gas to the substrate on which the first tungsten film is formed. The first carrier gas is a nitrogen gas. The second carrier gas includes at least one kind of nobel gas and has the noble gas at a flow rate of 70% or more with respect to a total flow rate of the second carrier gas.


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