Tokyo Electron Limited

Tokyo Electron Limi Ted

Shintaro Aoyama

Hiroshi Shinriki

Masanobu Igeta

Kazuyoshi Yamazaki

Tsuyoshi Takahashi

Hideki Kiryu

Atsushi Matsumoto

Koji Akiyama

Koji Maekawa

Susumu Arima

Takashi Sameshima

Mikio Suzuki

Naoki Shibata

Masahito Sugiura

Yu Wamura

Kouji Shimomura

Hirokazu Higashijima

Chihiro Tamura

Miki Aruga

A method of forming a tungsten film having low resistance is provided. The method includes forming a discontinuous film containing a metal on a substrate; and forming the tungsten film on the substrate on which the discontinuous film is formed. In the forming of the discontinuous film, a first source gas and a nitriding gas are supplied onto the substrate alternately along with, for example, a carrier gas. In the forming of the tungsten film, a second source gas and a reducing gas are supplied onto the substrate alternately along with, for example, a carrier gas.

Method of forming tungsten film

There is provided a tungsten film forming method which includes: forming a first tungsten film on a substrate; and forming a second tungsten film on the first tungsten film. The forming a first tungsten film includes alternately supplying a first raw material gas containing tungsten and a diborane gas together with a first carrier gas to the substrate. The forming a second tungsten film includes alternately supplying a second raw material gas containing tungsten and a hydrogen gas together with a second carrier gas to the substrate on which the first tungsten film is formed. The first carrier gas is a nitrogen gas. The second carrier gas includes at least one kind of nobel gas and has the noble gas at a flow rate of 70% or more with respect to a total flow rate of the second carrier gas.

Method of forming a tungsten film having a low resistance

A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more.

Semiconductor device manufacturing method and substrate treatment system

There is provided a method for modifying a high-k dielectric thin film provided on the surface of an object using a metal organic compound material. The method includes a preparation process for providing the object with the high-k dielectric thin film formed on the surface thereof, and a modification process for applying UV rays to the highly dielectric thin film in an inert gas atmosphere while maintaining the object at a predetermined temperature to modify the high-k dielectric thin film. According to the above constitution, the carbon component can be eliminated from the high-k dielectric thin film, and the whole material can be thermally shrunk to improve the density, whereby the occurrence of defects can be prevented and the film density can be improved to enhance the specific permittivity and thus to provide a high level of electric properties.

Method for modifying high-k dielectric thin film and semiconductor device

A disclosed substrate processing method in a single wafer substrate processing device including a first process position for introducing nitrogen atoms to a high-dielectric film and a second process position for performing heat treatment on the high-dielectric film includes: successively conveying plural substrates to be processed to the first process position and the second process position one by one; and successively performing the introduction of nitrogen atoms and the heat treatment on the high-dielectric film on the substrates to be processed, wherein the treatment on the substrate to be processed is started within 30 seconds at the second process position after the process at the first position.

High-dielectric film substrate processing method

A film forming method for forming an oxide film on a surface of a substrate to be processed in a processing vessel at a predetermined processing temperature, wherein the method includes a temperature elevating step of elevating a temperature of said substrate to a predetermined processing temperature, the step of elevating the temperature including a step of holding the substrate in an atmosphere containing oxygen before the substrate reaches a temperature of 450&#xb0; C. The film forming method further comprises, after the step of elevating the temperature, a film forming step of forming a radical oxide film by irradiating the substrate surface with energy capable of exciting an oxygen gas.

Film forming method

A method to solve such a problem that plasma will not ignite in restarting operation of a processing container that has not been operated with the inside kept drawn to vacuum. Gas containing oxygen is passed in a processing container, and ultraviolet light is irradiated to the gas while gas inside the processing containeris being discharged. After that, a remote plasma sourceis driven to ignite plasma.

Plasma igniting method and substrate processing method

A substrate-processing apparatus () comprises a radical-forming unit () for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel () in which a substrate (W) to be processed is held, and a gas-supplying unit () which is connected to the radical-forming unit. The gas-supplying unit () controls the mixture ratio between a first raw material gas containing the nitrogen and a second raw material gas containing oxygen, and supplies a mixture gas of a desired mixture ratio to the radical-forming unit. By supplying the nitrogen radicals and oxygen radicals mixed at the controlled mixture ratio to the surface of the substrate, an insulating film having a desired nitrogen concentration is formed on the surface of the substrate.

Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus

A substrate processing method includes the steps of removing carbon from a surface of a silicon substrate by irradiating an ultraviolet light on the surface in an essentially ultraviolet nonreactive gas atmosphere and forming an oxide film or an oxynitride film on the surface of the silicon substrate by irradiating an ultraviolet light thereon in an essentially ultraviolet reactive gas atmosphere. Further, a computer readable storage medium stores therein a program for controlling the substrate processing method.

Substrate processing method and a computer readable storage medium storing a program for controlling same

A substrate processing method includes the step of removing carbon from a silicon substrate surface and planarizing the silicon substrate surface from which carbon has been removed.

Method and device for processing substrate, and apparatus for manufacturing semiconductor device

A dry cleaning process for removing native oxide at improved efficiency is disclosed. The dry cleaning process minimizes the amount of fluorine atoms absorbed on the surface of a processed substrate. Fluorine radicals are provided to the substrate together with hydrogen radicals. The substrate is processed by the reaction of the fluorine radicals and the hydrogen radicals.

Method of removing oxide film on a substrate with hydrogen and fluorine radicals

A method of nitriding an insulation film, includes the steps of forming nitrogen radicals by high-frequency plasma, and causing nitridation in a surface of an insulation film containing therein oxygen, by supplying the nitrogen radicals to the surface of the insulation film.

Radical processing of a sub-nanometer insulation film

A method of forming a dielectric film on a Si substrate comprises the steps of adsorbing a gaseous molecular compound of a metal element constituting a dielectric material on a Si substrate, and causing a decomposition of the gaseous molecular compound thus adsorbed by a hydrolysis process or pyrolytic decomposition process or an oxidation process.

Method of forming a dielectric film

A stacked gate insulating film comprises a silicon oxide film and a tantalum oxide film which is stacked on the silicon oxide film and whose dielectric constant is higher than a dielectric constant of the silicon oxide film. The stacked gate insulating film is formed in accordance with the following steps. A semiconductor wafer is heated up, and the surface thereof is heat-oxidized. The silicon oxide film is formed on the semiconductor wafer (heat oxidation process). The silicon oxide film is etched back so as to be made thin (etch back process). The tantalum oxide film is stacked on the thin silicon oxide film (dielectric film formation process), thereby to form the stacked gate insulating film.

Method and system for forming a stacked gate insulating film

A pretreatment chamber is disposed within a vacuum transfer chamber of a processing apparatus The pretreatment chamber is equipped with an orienting mechanism and a UV lamp The orienting mechanism orients a wafer W through rotation of a table , on which the wafer W is placed, and by use of an optical sensor . Synchronously with the orientation, the UV lamp emits UV through a UV transmission window fitted to a ceiling portion of the pretreatment chamber , to thereby irradiate the surface of the wafer W with UV. Thus adhering to the wafer W is removed. A processing gas supplied into the pretreatment chamber is also irradiated with UV. Active atoms generated from the processing gas also contribute to removal of carbon. Since the pretreatment chamber is formed within the vacuum transfer chamber , the footprint of the processing apparatus can be reduced. Since orientation of the wafer W and removal of contaminants are performed concurrently, throughput is improved.

Growing community of inventors

Nirasaki, Japan

Shintaro Aoyama