The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Oct. 02, 2014
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Koji Akiyama, Nirasaki, JP;
Hirokazu Higashijima, Nirasaki, JP;
Chihiro Tamura, Nirasaki, JP;
Shintaro Aoyama, Nirasaki, JP;
Yu Wamura, Oshu, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/56 (2006.01); H01L 21/67 (2006.01); C23C 16/40 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); C23C 16/06 (2006.01); C23C 16/46 (2006.01); C23C 16/52 (2006.01); H01L 29/40 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02356 (2013.01); C23C 16/06 (2013.01); C23C 16/405 (2013.01); C23C 16/46 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H01L 21/022 (2013.01); H01L 21/0234 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/02194 (2013.01); H01L 21/02332 (2013.01); H01L 21/28158 (2013.01); H01L 21/28185 (2013.01); H01L 21/67109 (2013.01); H01L 21/67115 (2013.01); H01L 29/401 (2013.01); H01L 29/517 (2013.01); H01L 28/40 (2013.01);
Abstract
A semiconductor device manufacturing method that includes: forming a gate insulating film containing a hafnium oxide and a zirconium oxide on a workpiece having a source, a drain and a channel; and subjecting the gate insulating film to a crystallization heat treatment at a temperature of 600 degrees C. or less is provided. The gate insulating film subjected to the crystallization heat treatment has a relative permittivity of 27 or more.