The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Sep. 19, 2003
Masanobu Igeta, Nirasaki, JP;
Shintaro Aoyama, Nirasaki, JP;
Hiroshi Shinriki, Matsudo, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A substrate-processing apparatus () comprises a radical-forming unit () for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel () in which a substrate (W) to be processed is held, and a gas-supplying unit () which is connected to the radical-forming unit. The gas-supplying unit () controls the mixture ratio between a first raw material gas containing the nitrogen and a second raw material gas containing oxygen, and supplies a mixture gas of a desired mixture ratio to the radical-forming unit. By supplying the nitrogen radicals and oxygen radicals mixed at the controlled mixture ratio to the surface of the substrate, an insulating film having a desired nitrogen concentration is formed on the surface of the substrate.