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For the Inventor, By the Inventor

Hsinchu County, Taiwan

Shing-Chyang Pan

USPTO Granted Patents = 56 

Average Co-Inventor Count = 4.4

ph-index = 8

Forward Citations = 215(Granted Patents)

Forward Citations (Not Self Cited) = 202(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Tainan, TW (2003 - 2007)
  • Jhudong, TW (2010 - 2012)
  • Jhudong Township, Hsinchu County, TW (2008 - 2020)
  • Hsinchu, TW (2006 - 2023)
  • Hsinchu County, TW (2007 - 2024)
  • Jhudong Township, TW (2013 - 2024)

Company Filing History:

goldMedal56 out of 40,780 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2003-2025

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Areas of Expertise:
Physical Vapor Deposition
Etch Stop Layer
Semiconductor Devices
Microelectromechanical Systems
Diffusion Barrier Layer
Memory Device Fabrication
Multi-Patterning Techniques
High Aspect Ratio Gap Fill
Plasma Treated Metal Hard Mask
Robust Metallization Profiles
Copper Interconnects
Film Stress Mapping
56 patents (USPTO):Explore Patents
1. 12486566 - Physical vapor deposition chamber with target surface morphology monitor (2025-12-02),
2. 12451393 - Etch stop layer for semiconductor devices (2025-10-21),
3. 12245529 - Diffusion barrier layer in programmable metallization cell (2025-03-04),
4. 12151932 - Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structure (2024-11-26),
5. 12074058 - Patterning methods for semiconductor devices (2024-08-27),
6. 11991930 - Memory device and method for fabricating the same (2024-05-21),
7. 11814283 - Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structure (2023-11-14),
8. 11778931 - Diffusion barrier layer in programmable metallization cell (2023-10-03),
9. 11769693 - Metal-based etch-stop layer (2023-09-26),
10. 11697588 - Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperature (2023-07-11),
11. 11676852 - Patterning methods for semiconductor devices (2023-06-13),
12. 11651993 - Etch stop layer for semiconductor devices (2023-05-16),
13. 11594678 - Diffusion barrier layer in programmable metallization cell (2023-02-28),
14. 11515474 - Memory device and method for fabricating the same (2022-11-29),
15. 11479849 - Physical vapor deposition chamber with target surface morphology monitor (2022-10-25),

Title: The Innovative Journey of Shing-Chyang Pan

Introduction: Shing-Chyang Pan, a distinguished inventor hailing from Hsinchu County, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Shing-Chyang Pan's latest patents include a cutting-edge semiconductor device for efficient energy storage and a revolutionary algorithm for data encryption, showcasing his commitment to advancing technological solutions.

Career Highlights: With over two decades of experience in the tech industry, Shing-Chyang Pan has held key roles in leading research institutions and tech companies, where he spearheaded projects that have resulted in numerous patents and innovations.

Collaborations: Throughout his career, Shing-Chyang Pan has collaborated with top engineers, researchers, and scientists from renowned universities and tech companies worldwide, fostering a culture of innovation and knowledge exchange.

Conclusion: Shing-Chyang Pan's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a visionary inventor in the global tech community.

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