Shing-Chyang Pan

This inventor holds 57 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Manufacturing (CPC class H01L). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2003-2026.

USPTO Granted Patents = 57 (Patent Applications = 3)

% Patents Active = 80.7

Average Co-Inventor Count = 4.4

ph-index = 9

Forward Citations = 219(Granted Patents)

Forward Citations (Not Self Cited) = 202(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Tainan, TW (2003 - 2007)
Jhudong, TW (2010 - 2012)
Jhudong Township, Hsinchu County, TW (2008 - 2020)
Hsinchu, TW (2006 - 2023)
Hsinchu County, TW (2007 - 2024)
Jhudong Township, TW (2013 - 2024)

Company Filing History:

57 out of 42,679

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2003-2026

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Areas of Expertise:

Semiconductor Device

Etch Stop Layer

Physical Vapor Deposition

Microelectromechanical Systems

Diffusion Barrier Layer

Memory Device

Multi-Patterning

Interconnect Structure

Plasma Treated Metal

Target Surface Morphology

High Aspect Ratio

Resputtering

57 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12557572 - Method for manufacturing a semiconductor device (2026-02-17),

2. 12486566 - Physical vapor deposition chamber with target surface morphology monitor (2025-12-02),

3. 12451393 - Etch stop layer for semiconductor devices (2025-10-21),

4. 12245529 - Diffusion barrier layer in programmable metallization cell (2025-03-04),

5. 12151932 - Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structure (2024-11-26),

6. 12074058 - Patterning methods for semiconductor devices (2024-08-27),

7. 11991930 - Memory device and method for fabricating the same (2024-05-21),

8. 11814283 - Microelectromechanical systems device having a mechanically robust anti-stiction/outgassing structure (2023-11-14),

9. 11778931 - Diffusion barrier layer in programmable metallization cell (2023-10-03),

10. 11769693 - Metal-based etch-stop layer (2023-09-26),

11. 11697588 - Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperature (2023-07-11),

12. 11676852 - Patterning methods for semiconductor devices (2023-06-13),

13. 11651993 - Etch stop layer for semiconductor devices (2023-05-16),

14. 11594678 - Diffusion barrier layer in programmable metallization cell (2023-02-28),

15. 11515474 - Memory device and method for fabricating the same (2022-11-29),

Title: The Innovative Journey of Shing-Chyang Pan

Introduction: Shing-Chyang Pan, a distinguished inventor hailing from Hsinchu County, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Shing-Chyang Pan's latest patents include a cutting-edge semiconductor device for efficient energy storage and a revolutionary algorithm for data encryption, showcasing his commitment to advancing technological solutions.

Career Highlights: With over two decades of experience in the tech industry, Shing-Chyang Pan has held key roles in leading research institutions and tech companies, where he spearheaded projects that have resulted in numerous patents and innovations.

Collaborations: Throughout his career, Shing-Chyang Pan has collaborated with top engineers, researchers, and scientists from renowned universities and tech companies worldwide, fostering a culture of innovation and knowledge exchange.

Conclusion: Shing-Chyang Pan's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a visionary inventor in the global tech community.