The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Jul. 31, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Albert Zhong, Taichung, TW;
Cheng-Yuan Tsai, Chu-Pei, TW;
Hai-Dang Trinh, Hsinchu, TW;
Shing-Chyang Pan, Jhudong Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Some embodiments relate to a method for forming an integrated chip. The method includes forming a bottom electrode over a substrate. A data storage layer is formed on the bottom electrode. A diffusion barrier layer is formed over the data storage layer. The diffusion barrier layer has a first diffusion activation temperature. A top electrode is formed over the diffusion barrier layer. The top electrode has a second diffusion activation temperature less than the first diffusion activation temperature.