The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Dec. 04, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jung-Tang Wu, Kaohsiung, TW;
Szu-Ping Tung, Taipei, TW;
Szu-Hua Wu, Hsinchu County, TW;
Shing-Chyang Pan, Hsinchu County, TW;
Meng-Yu Wu, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A memory device includes a semiconductor substrate, a first dielectric layer, a metal contact, an aluminum nitride layer, an aluminum oxide layer, a second dielectric layer, a metal via, and a memory stack. The first dielectric layer is over the semiconductor substrate. The metal contact passes through the first dielectric layer. The aluminum nitride layer extends along a top surface of the first dielectric layer and a top surface of the metal contact. The aluminum oxide layer extends along a top surface of the aluminum nitride layer. The second dielectric layer is over the aluminum oxide layer. The metal via passes through the second dielectric layer, the aluminum oxide layer, and the aluminum nitride layer and lands on the metal contact. The memory stack lands on the metal via.