The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2023
Filed:
Mar. 03, 2020
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Albert Zhong, Hsin-Chu, TW;
Cheng-Yuan Tsai, Chu-Pei, TW;
Hai-Dang Trinh, Hsinchu, TW;
Shing-Chyang Pan, Jhudong Township, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1246 (2013.01); H01L 27/2436 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1266 (2013.01); H01L 45/1641 (2013.01); H01L 45/1675 (2013.01);
Abstract
Some embodiments relate to a memory device. The memory device includes a bottom electrode overlying a substrate. A data storage layer overlies the bottom electrode. A top electrode overlies the data storage layer. A conductive bridge is selectively formable within the data storage layer to couple the bottom electrode to the top electrode. A diffusion barrier layer is disposed between the data storage layer and the top electrode.