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For the Inventor, By the Inventor

Yokohama, Japan

Shigeki Takahashi

This inventor holds 44 USPTO granted patents and 1 published patent application, primarily in Magnetic Memory. Top assignees: Kabushiki Kaisha Toshiba, Samsung Electronics Co., Ltd., National Institute for Materials Science. Active years: 1993-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shigeki Takahashi. Retrieved from https://idiyas.com/inventor/shigeki-takahashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 44 

% Patents Active = 65.9

Average Co-Inventor Count = 4.8

ph-index = 15

Forward Citations = 808(Granted Patents)


Location History:

  • Kawasaki, JP (1993 - 2001)
  • Kanagawa-ken, JP (2003 - 2015)
  • Yokohama, JP (2003 - 2019)
  • Kanagawa, JP (2022)

Company Filing History:

goldMedal41 out of 53,262 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal3 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
bronzeMedal1 out of 575 
 
National Institute for Materials Science
 patents
where one patent can have more than one assignee

Years Active: 1993-2022

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Areas of Expertise:
Magnetoresistive Device
Magnetic Memory
Magnetic Tunnel Junction
Nonvolatile Memory
Fabrication Method
Ferromagnetic Junction
Magnetic Recording Element
Multilayer Film
Magneto-Resistance Effect
Embedded Memory
Semiconductor Device
Random Access Memory
44 patents (USPTO):Explore Patents
1. 11502246 - Magnetoresistive device, magnetic memory, and method of fabricating a magnetoresistive device (2022-11-15),
2. 10395809 - Perpendicular magnetic layer and magnetic device including the same (2019-08-27),
3. 9349944 - Magnetic tunnel junction device (2016-05-24),
4. 9224944 - Magnetic memory and method of manufacturing the same (2015-12-29),
5. 9082961 - Method of manufacturing multilayer film (2015-07-14),
6. 8981507 - Method for manufacturing nonvolatile memory device (2015-03-17),
7. 8716034 - Method of manufacturing magnetic memory (2014-05-06),
8. 8710605 - Magnetic memory and method of manufacturing the same (2014-04-29),
9. 8531875 - Magnetic memory (2013-09-10),
10. 8488375 - Magnetic recording element and nonvolatile memory device (2013-07-16),
11. 8081505 - Magnetoresistive element and method of manufacturing the same (2011-12-20),
12. 8058080 - Method of manufacturing a magnetic random access memory, method of manufacturing an embedded memory, and template (2011-11-15),
13. 7483291 - Magneto-resistance effect element, magnetic memory and magnetic head (2009-01-27),
14. 7470963 - Magnetoresistive element and magnetic memory (2008-12-30),
15. 7333359 - Magnetic random access memory (2008-02-19),

Title: Shigeki Takahashi: Innovator in Magnetoresistive Technology

Introduction

Shigeki Takahashi, based in Yokohama, Japan, is a prominent inventor with an impressive portfolio of 44 patents. His contributions to the field of magnetoresistive devices and magnetic memory have significantly advanced the technology landscape in this area.

Latest Patents

Among his latest inventions, Takahashi has developed a range of innovative technologies, including a magnetoresistive device that features a spin-orbit-torque (SOT) electrode layer. This device comprises several layers, such as a first magnetic layer, a first non-magnetic layer, and a second magnetic layer, all meticulously stacked over the SOT electrode layer. Moreover, an interface layer composed of a metal with a greater spin diffusion length than its thickness is utilized. An etch stop layer also plays a crucial role by covering a surface portion of the SOT electrode layer, showcasing his intricate approach to device fabrication. Another of his notable patents describes a flat perpendicular magnetic layer with low saturation magnetization, which is used in a tunnel magnetoresistive element. This layer is formed by introducing nitrogen into a MnGa alloy, enabling the creation of a flat perpendicular magnetic layer that enhances device performance.

Career Highlights

Takahashi's robust career has seen him work for leading companies in technology, notably Toshiba Corporation and Samsung Electronics Co., Ltd. His work at these institutions has allowed him to focus on critical advancements in magnetic technologies, resulting in numerous successful patents.

Collaborations

Throughout his career, Shigeki Takahashi has collaborated with esteemed colleagues such as Minoru Amano and Yoshiaki Saito. These partnerships have fostered an environment of innovation and creativity, contributing to the high-quality research and development efforts in the field of magnetoresistive devices.

Conclusion

Shigeki Takahashi stands out as a pioneering inventor in the realm of magnetoresistive technology. His substantial patent portfolio, combined with his experience at leading technology firms and collaborations with talented peers, solidifies his reputation as a significant figure in the industry. His ongoing contributions are poised to continue shaping the future of magnetic devices and memory systems, reflecting his commitment to innovation and excellence.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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