The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
May. 10, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
National Institute for Materials Science, Ibaraki, JP;
Shigeki Takahashi, Yokohama, JP;
Yoshiaki Sonobe, Yokohama, JP;
Hiroaki Sukegawa, Tsukuba, JP;
Hwachol Lee, Tsukuba, JP;
Kazuhiro Hono, Tsukuba, JP;
Seiji Mitani, Tsukuba, JP;
Jun Liu, Tsukuba, JP;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
National Institute for Materials Science, Ibaraki, JP;
Abstract
Embodiments of the inventive concepts provide a flat perpendicular magnetic layer having a low saturation magnetization and a perpendicular magnetization-type tunnel magnetoresistive element using the same. The perpendicular magnetic layer is a nitrogen-poor (MnGa)Nlayer (0<x≤0.5 and 0<y<0.1) formed by providing nitrogen (N) into a MnGa alloy while adjusting a nitrogen amount. The perpendicular magnetic layer can be formed flat.