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For the Inventor, By the Inventor

Ibaraki, Japan

Hiroaki Sukegawa

This inventor holds 15 USPTO granted patents and 1 published patent application and 3 EPO patents. Top assignees: National Institute for Materials Science, Samsung Electronics Co., Ltd., Tdk Corporation. Active years: 2013-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroaki Sukegawa. Retrieved from https://idiyas.com/inventor/hiroaki-sukegawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 15 

% Patents Active = 93.3

 

Average Co-Inventor Count = 5.8

ph-index = 3

Forward Citations = 15(Granted Patents)


Location History:

  • Ibaraki-ken, JP (2014)
  • Ibaraki, JP (2013 - 2022)
  • Tsukuba, JP (2019 - 2023)

Company Filing History:

goldMedal15 out of 575 
 
National Institute for Materials Science
 patents
silverMedal2 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
bronzeMedal2 out of 8,247 
 
Tdk Corporation
 patents
4. 1 out of 53,250 
 
Kabushiki Kaisha Toshiba
 patents
where one patent can have more than one assignee

Years Active: 2013-2023

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15 patents (USPTO):Explore Patents
1. 11585873 - Magnetoresistive effect element containing two non-magnetic layers with different crystal structures (2023-02-21),
2. 11374168 - Precursor structure of perpendicularly magnetized film, perpendicularly magnetized film structure and method for manufacturing the same, perpendicular magnetization-type magnetic tunnel junction film in which said structure is used and method for manufacturing the same, and perpendicular magnetization-type magnetic tunnel junction element in which said structure or magnetic tunnel junction film is used (2022-06-28),
3. 11107976 - Magnetic tunnel junction, spintronics device using same, and method for manufacturing magnetic tunnel junction (2021-08-31),
4. 11105867 - Magnetic tunnel junction, magnetoresistive element and spintronics device in which said magnetic tunnel junction is used, and method of manufacturing magnetic tunnel junction (2021-08-31),
5. 10832719 - Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same (2020-11-10),
6. 10749105 - Monocrystalline magneto resistance element, method for producing the same and method for using same (2020-08-18),
7. 10665776 - Magnetoresistance effect element and method for manufacturing the same (2020-05-26),
8. 10395809 - Perpendicular magnetic layer and magnetic device including the same (2019-08-27),
9. 10305027 - Magnetoresistive element and magnetic memory device (2019-05-28),
10. 10205091 - Monocrystalline magneto resistance element, method for producing the same and method for using same (2019-02-12),
11. 10199063 - Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same (2019-02-05),
12. 9842636 - Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording medium (2017-12-12),
13. 8872291 - Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same (2014-10-28),
14. 8866243 - Ferromagnetic tunnel junction structure and magnetoresistive element using the same (2014-10-21),
15. 8575674 - Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same (2013-11-05),

Title: Hiroaki Sukegawa: Innovator in Magnetoresistive Technology

Introduction

Hiroaki Sukegawa is a prominent inventor based in Ibaraki, Japan. He has made significant contributions to the field of magnetoresistive technology, holding a total of 15 patents. His work has advanced the understanding and application of magnetic materials in various technologies.

Latest Patents

Sukegawa's latest patents include a magnetoresistive effect element that features two non-magnetic layers with different crystal structures. This innovative element consists of a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer positioned between them. The non-magnetic layer is composed of a first layer and a second layer, with specific lattice constants that satisfy a defined relationship. Additionally, he has developed a precursor structure for perpendicularly magnetized films, which enhances interface-induced magnetic anisotropy. This structure utilizes an alloy with iron as a primary component and magnesium aluminate as a foundational configuration.

Career Highlights

Throughout his career, Sukegawa has worked with esteemed organizations such as the National Institute for Materials Science and Samsung Electronics Co., Ltd. His research has significantly impacted the development of magnetic materials and their applications in technology.

Collaborations

Sukegawa has collaborated with notable colleagues, including Kazuhiro Hono and Seiji Mitani. Their joint efforts have contributed to advancements in the field of magnetoresistive technology.

Conclusion

Hiroaki Sukegawa's innovative work in magnetoresistive technology and his numerous patents highlight his importance in the field. His contributions continue to influence advancements in magnetic materials and their applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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