IDiyas

For the Inventor, By the Inventor

Ibaraki, Japan

Hiroaki Sukegawa

USPTO Granted Patents = 15


Average Co-Inventor Count = 5.8

ph-index = 3

Forward Citations = 15(Granted Patents)


Location History:

  • Ibaraki-ken, JP (2014)
  • Ibaraki, JP (2013 - 2022)
  • Tsukuba, JP (2019 - 2023)

Company Filing History:

goldMedal15 out of 548 
 
National Institute for Materials Science
 patents
silverMedal2 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
bronzeMedal2 out of 7,952 
 
Tdk Corporation
 patents
4. 1 out of 52,711 
 
Kabushiki Kaisha Toshiba
 patents
where one patent can have more than one assignee

Years Active: 2013-2023

where 'Filed Patents' based on already Granted Patents

15 patents (USPTO):
1. 11585873 - Magnetoresistive effect element containing two non-magnetic layers with different crystal structures (2023-02-21),
2. 11374168 - Precursor structure of perpendicularly magnetized film, perpendicularly magnetized film structure and method for manufacturing the same, perpendicular magnetization-type magnetic tunnel junction film in which said structure is used and method for manufacturing the same, and perpendicular magnetization-type magnetic tunnel junction element in which said structure or magnetic tunnel junction film is used (2022-06-28),
3. 11107976 - Magnetic tunnel junction, spintronics device using same, and method for manufacturing magnetic tunnel junction (2021-08-31),
4. 11105867 - Magnetic tunnel junction, magnetoresistive element and spintronics device in which said magnetic tunnel junction is used, and method of manufacturing magnetic tunnel junction (2021-08-31),
5. 10832719 - Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same (2020-11-10),
6. 10749105 - Monocrystalline magneto resistance element, method for producing the same and method for using same (2020-08-18),
7. 10665776 - Magnetoresistance effect element and method for manufacturing the same (2020-05-26),
8. 10395809 - Perpendicular magnetic layer and magnetic device including the same (2019-08-27),
9. 10305027 - Magnetoresistive element and magnetic memory device (2019-05-28),
10. 10205091 - Monocrystalline magneto resistance element, method for producing the same and method for using same (2019-02-12),
11. 10199063 - Underlayer for perpendicularly magnetized film, perpendicularly magnetized film structure, perpendicular MTJ element, and perpendicular magnetic recording medium using the same (2019-02-05),
12. 9842636 - Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording medium (2017-12-12),
13. 8872291 - Ferromagnetic tunnel junction structure and magnetoresistive effect device and spintronics device utilizing same (2014-10-28),
14. 8866243 - Ferromagnetic tunnel junction structure and magnetoresistive element using the same (2014-10-21),
15. 8575674 - Ferromagnetic tunnel junction structure, and magneto-resistive element and spintronics device each using same (2013-11-05),
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