The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Jan. 31, 2017
National Institute for Materials Science, Ibaraki, JP;
Hiroaki Sukegawa, Ibaraki, JP;
Thomas Scheike, Ibaraki, JP;
Seiji Mitani, Ibaraki, JP;
Tadakatsu Ohkubo, Ibaraki, JP;
Kazuhiro Hono, Ibaraki, JP;
Kouichiro Inomata, Ibaraki, JP;
NATIONAL INSTITUTE FOR MATERIALS SCIENCE, Ibaraki, JP;
Abstract
The object of the present invention is to attain an unconventionally high tunnel magnetoresistance (TMR) ratio by using a barrier layer made of an MgAlOtype insulator material with a spinel structure. The problem can be solved by a magnetic tunnel junction in which a barrier layer is made of a cubic nonmagnetic material having a spinel structure, and both of two ferromagnetic layers that are adjacently on and below the barrier layer are made of a CoFeAl Heusler alloy. Preferably, the nonmagnetic material is made of oxide of an MgAl(0<x≤1) alloy, and exhibits tunnel magnetoresistance of 250% or more and 34000% or less at a room temperature.