The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2020

Filed:

Mar. 29, 2018
Applicant:

National Institute for Materials Science, Tsukuba-shi, Ibaraki, JP;

Inventors:

Jiamin Chen, Tsukuba, JP;

Yuya Sakuraba, Tsukuba, JP;

Jun Liu, Tsukuba, JP;

Hiroaki Sukegawa, Tsukuba, JP;

Kazuhiro Hono, Tsukuba, JP;

Assignee:

NATIONAL INSTITUTE FOR MATERIALS SCIENCE, Tsukuba-Shi, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/10 (2006.01); H01F 10/16 (2006.01); H01F 10/28 (2006.01); H01F 10/30 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01F 10/193 (2006.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
H01L 43/10 (2013.01); H01F 10/16 (2013.01); H01F 10/1936 (2013.01); H01F 10/28 (2013.01); H01F 10/30 (2013.01); H01F 10/3272 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01); H01F 10/3254 (2013.01);
Abstract

To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate, a base layerhaving a B2 structure laminated on the silicon substrate, a first non-magnetic layerlaminated on the base layerhaving a B2 structure, and a giant magnetoresistance effect layerhaving at least one laminate layer including a lower ferromagnetic layer, an upper ferromagnetic layer, and a second non-magnetic layerdisposed between the lower ferromagnetic layerand the upper ferromagnetic layer


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