The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Apr. 15, 2010
Hiroaki Sukegawa, Ibaraki, JP;
Koichiro Inomata, Ibaraki, JP;
Rong Shan, Ibaraki, JP;
Masaya Kodzuka, Ibaraki, JP;
Kazuhiro Hono, Ibaraki, JP;
Takao Furubayashi, Ibaraki, JP;
Wenhong Wang, Ibaraki, JP;
Hiroaki Sukegawa, Ibaraki, JP;
Koichiro Inomata, Ibaraki, JP;
Rong Shan, Ibaraki, JP;
Masaya Kodzuka, Ibaraki, JP;
Kazuhiro Hono, Ibaraki, JP;
Takao Furubayashi, Ibaraki, JP;
Wenhong Wang, Ibaraki, JP;
National Institute for Materials Science, Ibaraki, JP;
Abstract
Disclosed is a ferromagnetic tunnel junction structure which is characterized by having a tunnel barrier layer that comprises a non-magnetic material having a spinel structure. The ferromagnetic tunnel junction structure is also characterized in that the non-magnetic material is substantially MgAlO. The ferromagnetic tunnel junction is also characterized in that at least one of the ferromagnetic layers comprises a Co-based full Heusler alloy having an L2or B2 structure. The ferromagnetic tunnel junction structure is also characterized in that the Co-based full Heusler alloy comprises a substance represented by the following formula: CoFeAlSi(0≦x≦1). Also disclosed are a magnetoresistive element and a spintronics device, each of which utilizes the ferromagnetic tunnel junction structure and can achieve a high TMR value, that cannot be achieved by employing conventional tunnel barrier layers other than a MgO barrier.