Ibaraki, Japan

Wenhong Wang

This inventor holds 2 USPTO granted patents and 1 EPO patent. Top assignee: National Institute for Materials Science. Active years: 2013-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wenhong Wang. Retrieved from https://idiyas.com/inventor/wenhong-wang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0


Average Co-Inventor Count = 4.2

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2013-2014

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2 patents (USPTO):Explore Patents

Title: The Innovations of Wenhong Wang in Spintronics

Introduction

Wenhong Wang, an accomplished inventor based in Ibaraki, Japan, has made significant contributions to the field of spintronics. With a total of two patents to her name, Wang's work focuses on enhancing magnetoresistive elements and ferromagnetic tunnel junction structures, which have vast implications for modern electronics and data storage technologies.

Latest Patents

Wang's latest patents include groundbreaking advancements in ferromagnetic tunnel junction structures and magnetoresistive elements. One patent highlights a ferromagnetic tunnel junction structure that utilizes an MgO barrier combined with a CoFeAl full-Heusler alloy for the ferromagnetic layers. Notably, this structure can achieve a large tunnel magnetoresistance (TMR), exceeding 100% at room temperature, a significant milestone in the pursuit of high-performance spintronic devices.

The second patent presents a novel approach that features a tunnel barrier layer composed of a non-magnetic material with a spinel structure. This design allows for the use of MgAlO as the non-magnetic material, paired with a Co-based full Heusler alloy having an L2 or B2 structure. The innovations presented in both patents promise to enhance the TMR values achievable in magnetoresistive elements and spintronics devices, which ultimately allows for advancements beyond traditional tunnel barriers.

Career Highlights

Wenhong Wang is currently employed at the National Institute for Materials Science, a leading research institution dedicated to material innovations and technologies. Her role focuses on advancing materials for spintronics, where she applies her expertise in ferromagnetic materials and electronic structures.

Collaborations

Throughout her career, Wang has collaborated with notable colleagues including Hiroaki Sukegawa and Koichiro Inomata. These partnerships have fostered a synergy of ideas and techniques that enrich her research and contribute to the advancement of the field.

Conclusion

Wenhong Wang stands out as a pioneering inventor in the realm of spintronics, with her groundbreaking patents paving the way for future innovations. Her contributions not only enhance our understanding of magnetoresistive elements but also hold promise for the future of electronics, making her a noteworthy figure in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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