The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2020
Filed:
Feb. 14, 2019
Tdk Corporation, Tokyo, JP;
National Institute for Materials Science, Tsukuba-shi, Ibaraki, JP;
Shinto Ichikawa, Tokyo, JP;
Katsuyuki Nakada, Tokyo, JP;
Seiji Mitani, Tsukuba, JP;
Hiroaki Sukegawa, Tsukuba, JP;
Kazuhiro Hono, Tsukuba, JP;
Tadakatsu Ohkubo, Tsukuba, JP;
TDK CORPORATION, Tokyo, JP;
NATIONAL INSTITUTE FOR MATERIALS SCIENCE, Tsukuba-shi, JP;
Abstract
Provided is a magnetoresistance effect element in which a tunnel barrier layer stably has a cation disordered spinel structure. This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. In addition, the tunnel barrier layer is an oxide of MgAl(0≤x<1) and an amount of oxygen in the tunnel barrier layer is lower than an amount of oxygen in a fully oxidized state in which the oxide has an ordered spinel structure.