The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2017
Filed:
Apr. 21, 2016
National Institute for Materials Science, Ibaraki, JP;
Samsung Electronics Company Limited, Gyeonggi-do, KR;
Hiroaki Sukegawa, Ibaraki, JP;
Hwachol Lee, Ibaraki, JP;
Kazuhiro Hono, Ibaraki, JP;
Seiji Mitani, Ibaraki, JP;
Tadakatsu Ohkubo, Ibaraki, JP;
Jun Liu, Ibaraki, JP;
Shinya Kasai, Ibaraki, JP;
Kwangseok Kim, Gyeonggi-do, KR;
NATIONAL INSTITUTE FOR MATERIALS SCIENCE, Ibaraki, JP;
SAMSUNG ELECTRONICS COMPANY LIMITED, Gyeonggi-Do, KR;
Abstract
Provided is a structure having a perpendicular magnetization film which is an (MnGa)N(0<x≦0.5, 0<y<1) thin film having a nitrogen-deficient composition which is formed by controlling and introducing nitrogen N into an MnGa alloy or a thin film containing at least one of Ge, Zn, Sb, Ni, Ag, Sn, Pt, and Rh, instead of Ga. The perpendicular magnetization film exhibits a Curie temperature sufficiently higher than room temperature, has saturation magnetization smaller than that of existing materials, and is capable of being fabricated as a very flat film.