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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8058080 B1

PDFFull Text
Date of Patent:
Nov. 15, 2011

Filed:

Feb. 03, 2010

Method of manufacturing a magnetic random access memory, method of manufacturing an embedded memory, and template

Applicants:

Takeshi Kajiyama, Yokohama, JP;

Yoshiaki Asao, Kawasaki, JP;

Minoru Amano, Sagamihara, JP;

Shigeki Takahashi, Yokohama, JP;

Masayoshi Iwayama, Kawasaki, JP;

Kuniaki Sugiura, Fujisawa, JP;

Inventors:

Takeshi Kajiyama, Yokohama, JP;

Yoshiaki Asao, Kawasaki, JP;

Minoru Amano, Sagamihara, JP;

Shigeki Takahashi, Yokohama, JP;

Masayoshi Iwayama, Kawasaki, JP;

Kuniaki Sugiura, Fujisawa, JP;

Assignee:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Attorney:

Knobbe Martens Olson & Bear LLP

Primary Examiner:

Walter L Lindsay, Jr

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/20 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract

A magnetic material of a magnetoresistive element is formed on a lower electrode. An upper electrode is formed on the magnetic material. A resist for nano-imprint lithography is formed on the upper electrode. A first pattern or a second pattern is formed in the resist by setting a first template or a second template into contact with the resist and curing the resist. The first template has the first pattern that corresponds to the magnetoresistive element and the lower electrode. The second template has the second pattern that corresponds to the magnetoresistive element and the upper electrode. The magnetic material and the lower electrode are patterned at the same time by using the resist having the first pattern, or the magnetic material and the upper electrode are patterned at the same time by using the resist having the second pattern.

Find Patent Forward Citations

Kajiyama, Takeshi. (2011). Method of manufacturing a magnetic random access memory, method of manufacturing an embedded memory, and template (U.S. Patent No. 8058080). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8058080

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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