The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Jun. 27, 2012
Shigeki Takahashi, Kanagawa-ken, JP;
Kyoichi Suguro, Kanagawa-ken, JP;
Junichi Ito, Kanagawa-ken, JP;
Yuichi Ohsawa, Kanagawa-ken, JP;
Hiroaki Yoda, Kanagawa-ken, JP;
Shigeki Takahashi, Kanagawa-ken, JP;
Kyoichi Suguro, Kanagawa-ken, JP;
Junichi Ito, Kanagawa-ken, JP;
Yuichi Ohsawa, Kanagawa-ken, JP;
Hiroaki Yoda, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a method for manufacturing a nonvolatile memory device including a plurality of memory cells is disclosed. Each of the plurality of memory cells includes a base layer including a first electrode, a magnetic tunnel junction device provided on the base layer, and a second electrode provided on the magnetic tunnel junction device. The magnetic tunnel junction device includes a first magnetic layer, a tunneling barrier layer provided on the first magnetic layer, and a second magnetic layer provided on the tunneling barrier layer. The method can include etching a portion of the second magnetic layer and a portion of the first magnetic layer by irradiating gas clusters onto a portion of a surface of the second magnetic layer or a portion of a surface of the first magnetic layer.