Kabushiki Kaisha Toshiba

Samsung Electronics Co., Ltd.

National Institute for Materials Science

Shigeki Takahashi

Minoru Amano

Yoshiaki Saito

Tatsuya Kishi

Hiroaki Yoda

Tomomasa Ueda

Yoshiaki Asao

Katsuya Nishiyama

Kentaro Nakajima

Yoshihisa Iwata

Masayuki Sagoi

Yuichi Ohsawa

Junichi Ito

Kyoichi Suguro

Koichiro Inomata

Tetsufumi Tanamoto

Chikayoshi Kamata

Daisuke Saida

Saori Kashiwada

Riichi Katoh

Tadashi Kai

Takeshi Kajiyama

Yoshiaki Sonobe

Kuniaki Sugiura

Yoshiaki Fukuzumi

Masatoshi Yoshikawa

Masahiko Nakayama

Li Zhang

Tadashi Sakai

Eiji Kitagawa

Naoharu Shimomura

Keiji Hosotani

Hisanori Aikawa

Kazuhiro Hono

Yasuhiro Shiraki

Masayoshi Iwayama

Hiroaki Sukegawa

Jyunichi Ozeki

Seiji Mitani

Satoshi Yanagi

Masao Mashita

Taketoshi Suzuki

Jun Liu

Hwachol Lee

Yujiro Naruse

Francis Minoru Saba

Koki Takanashi

A magnetoresistive device includes a spin-orbit-torque (SOT) electrode layer, and a first magnetic layer, a first non-magnetic layer, and a second magnetic layer sequentially stacked over the SOT electrode layer. An interface layer is located between the SOT electrode layer and the first magnetic layer, and an etch stop layer covers a surface portion of the SOT electrode layer and is located adjacent the interface layer. The interface layer includes a metal having a spin diffusion length that is greater than a thickness of the interface layer, and the etch stop layer includes an oxide or nitride material of the metal.

Magnetoresistive device, magnetic memory, and method of fabricating a magnetoresistive device

Embodiments of the inventive concepts provide a flat perpendicular magnetic layer having a low saturation magnetization and a perpendicular magnetization-type tunnel magnetoresistive element using the same. The perpendicular magnetic layer is a nitrogen-poor (MnGa)Nlayer (0&#x3c;x&#x2264;0.5 and 0&#x3c;y&#x3c;0.1) formed by providing nitrogen (N) into a MnGa alloy while adjusting a nitrogen amount. The perpendicular magnetic layer can be formed flat.

Perpendicular magnetic layer and magnetic device including the same

A magnetic tunnel junction device includes: a first magnetic layer that has an easy axis vertical to a surface; a non-magnetic layer on the first magnetic layer; and a second magnetic layer that has an easy axis vertical to a surface on the non-magnetic layer, and an interface layer formed of a Heussler alloy between the non-magnetic layer and at least one of the first and second magnetic layers. The at least one of the first and second magnetic layers is formed of MnGa. A lattice constant of the interface layer parallel to a major surface thereof in a bulk state thereof is between a lattice constant of the non-magnetic layer parallel to a major surface thereof in a bulk state thereof and a lattice constant of the at least one of the first and second magnetic layers parallel to a major surface thereof in a bulk state thereof.

Magnetic tunnel junction device

A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.

Magnetic memory and method of manufacturing the same

According to one embodiment, a method of manufacturing a multilayer film, the method includes forming a first layer, forming a second layer on the first layer, and transcribing a crystal information of one of the first and second layers to the other one of the first and second layers by executing a GCIB-irradiation to the second layer.

Method of manufacturing multilayer film

According to one embodiment, a method for manufacturing a nonvolatile memory device including a plurality of memory cells is disclosed. Each of the plurality of memory cells includes a base layer including a first electrode, a magnetic tunnel junction device provided on the base layer, and a second electrode provided on the magnetic tunnel junction device. The magnetic tunnel junction device includes a first magnetic layer, a tunneling barrier layer provided on the first magnetic layer, and a second magnetic layer provided on the tunneling barrier layer. The method can include etching a portion of the second magnetic layer and a portion of the first magnetic layer by irradiating gas clusters onto a portion of a surface of the second magnetic layer or a portion of a surface of the first magnetic layer.

Method for manufacturing nonvolatile memory device

According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning.

Method of manufacturing magnetic memory

According to one embodiment, a magnetic memory includes at least one memory cell including a magnetoresistive element, and first and second electrodes. The element includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a third magnetic layer provided on the second magnetic layer and having a magnetization antiparallel to the magnetization direction of the second magnetic layer. A diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer. A diameter of a lower surface of the second magnetic layer is not more than that of an upper surface of the tunnel barrier layer.

Magnetic memory

According to one embodiment, a magnetic recording element includes a stacked body including a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer and a first nonmagnetic layer. Magnetization of the first ferromagnetic layer is substantially fixed in a first direction being perpendicular to a first ferromagnetic layer surface. The second stacked unit includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second nonmagnetic layer. Magnetization of the fourth ferromagnetic layer is substantially fixed in a second direction being perpendicular to a fourth ferromagnetic layer surface. The first direction is opposite to the second direction.

Magnetic recording element and nonvolatile memory device

A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.

Magnetoresistive element and method of manufacturing the same

A magnetic material of a magnetoresistive element is formed on a lower electrode. An upper electrode is formed on the magnetic material. A resist for nano-imprint lithography is formed on the upper electrode. A first pattern or a second pattern is formed in the resist by setting a first template or a second template into contact with the resist and curing the resist. The first template has the first pattern that corresponds to the magnetoresistive element and the lower electrode. The second template has the second pattern that corresponds to the magnetoresistive element and the upper electrode. The magnetic material and the lower electrode are patterned at the same time by using the resist having the first pattern, or the magnetic material and the upper electrode are patterned at the same time by using the resist having the second pattern.

Method of manufacturing a magnetic random access memory, method of manufacturing an embedded memory, and template

A magneto-resistance effect element includes: a first ferromagnetic layer serving as a magnetization fixed layer; a magnetization free layer including a second ferromagnetic layer provided on one side of the first ferromagnetic layer, a third ferromagnetic layer which is formed on an opposite side of the second ferromagnetic layer from the first ferromagnetic layer and has a film face having an area larger than that of the second ferromagnetic layer and whose magnetization direction is changeable by an external magnetic field, and an intermediate layer provided between the second ferromagnetic layer and the third ferromagnetic layer; and a tunnel baffler layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The second ferromagnetic layer and the third ferromagnetic layer are magnetically coupled via the intermediate layer, and an aspect ratio of a plane shape of the third ferromagnetic layer is within a range from 1 to 2.

Magneto-resistance effect element, magnetic memory and magnetic head

There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to a central portion of the main body in the hard magnetization axis direction, a direction of magnetization of the storage layer being changeable in accordance with an external magnetic field.

Magnetoresistive element and magnetic memory

A write word line is disposed right under a MTJ element. The write word line extends in an X direction, and side and lower surfaces of the write word line are coated with a hard magnetic material and yoke material. The hard magnetic material is magnetized by a surplus current passed through the write word line, and a characteristic of the MTJ element is corrected by residual magnetization. A data selection line (read/write bit line) is disposed right on the MTJ element. The data selection line extends in a Y direction intersecting with the X direction, and a part of the surface of the data selection line is coated with the yoke material.

Magnetic random access memory

Growing community of inventors

Yokohama, Japan

Shigeki Takahashi