The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2014

Filed:

Sep. 13, 2011
Applicants:

Shigeki Takahashi, Yokohama, JP;

Yuichi Ohsawa, Yokohama, JP;

Junichi Ito, Yokohama, JP;

Chikayoshi Kamata, Kawasaki, JP;

Saori Kashiwada, Yokohama, JP;

Minoru Amano, Sagamihara, JP;

Hiroaki Yoda, Kawasaki, JP;

Inventors:

Shigeki Takahashi, Yokohama, JP;

Yuichi Ohsawa, Yokohama, JP;

Junichi Ito, Yokohama, JP;

Chikayoshi Kamata, Kawasaki, JP;

Saori Kashiwada, Yokohama, JP;

Minoru Amano, Sagamihara, JP;

Hiroaki Yoda, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract

A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.


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