The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2011

Filed:

Sep. 09, 2009
Applicants:

Takeshi Kajiyama, Yokohama, JP;

Yoshiaki Asao, Sagamihara, JP;

Shigeki Takahashi, Yokohama, JP;

Minoru Amano, Sagamihara, JP;

Kuniaki Sugiura, Fujisawa, JP;

Inventors:

Takeshi Kajiyama, Yokohama, JP;

Yoshiaki Asao, Sagamihara, JP;

Shigeki Takahashi, Yokohama, JP;

Minoru Amano, Sagamihara, JP;

Kuniaki Sugiura, Fujisawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01);
U.S. Cl.
CPC ...
Abstract

A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.


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