The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Mar. 21, 2012
Satoshi Yanagi, Kawasaki, JP;
Eiji Kitagawa, Yokohama, JP;
Masahiko Nakayama, Yokohama, JP;
Jyunichi Ozeki, Yokohama, JP;
Hisanori Aikawa, Yokohama, JP;
Naoharu Shimomura, Tokyo, JP;
Masatoshi Yoshikawa, Yokohama, JP;
Minoru Amano, Sagamihara, JP;
Shigeki Takahashi, Yokohama, JP;
Hiroaki Yoda, Sagamihara, JP;
Satoshi Yanagi, Kawasaki, JP;
Eiji Kitagawa, Yokohama, JP;
Masahiko Nakayama, Yokohama, JP;
Jyunichi Ozeki, Yokohama, JP;
Hisanori Aikawa, Yokohama, JP;
Naoharu Shimomura, Tokyo, JP;
Masatoshi Yoshikawa, Yokohama, JP;
Minoru Amano, Sagamihara, JP;
Shigeki Takahashi, Yokohama, JP;
Hiroaki Yoda, Sagamihara, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a magnetic memory includes at least one memory cell including a magnetoresistive element, and first and second electrodes. The element includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a third magnetic layer provided on the second magnetic layer and having a magnetization antiparallel to the magnetization direction of the second magnetic layer. A diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer. A diameter of a lower surface of the second magnetic layer is not more than that of an upper surface of the tunnel barrier layer.