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For the Inventor, By the Inventor

Lawrenceville, NJ, United States of America

Sheng T Hsu

This inventor holds 42 USPTO granted patents, primarily in Semiconductor Technology. Top assignees: Rca Inc., General Electric Company, David Sarnoff Research Center, Inc.. Active years: 1976-1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sheng T Hsu. Retrieved from https://idiyas.com/inventor/sheng-t-hsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 42

% Patents Active = 100.0

Average Co-Inventor Count = 1.2

ph-index = 19

Forward Citations = 875(Granted Patents)


Location History:

  • West Windsor, NJ (US) (1981)
  • W. Windsor Township, Mercer County, NJ (US) (1987)
  • West Windsor Township, Mercer County, NJ (US) (1985 - 1991)
  • Lawrenceville, NJ (US) (1976 - 1992)

Company Filing History:

goldMedal33 out of 5,349 
 
Rca Inc.
 patents
silverMedal5 out of 52,404 
 
General Electric Company
 patents
bronzeMedal2 out of 145 
 
David Sarnoff Research Center, Inc.
 patents
4. 2 out of 3,523 
 
Harris Corporation
 patents

Years Active: 1976-1992

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Areas of Expertise:
BiCMOS Process
MOS Transistor
Integrated Circuit
High Density Circuits
Programmable Memory
Radiation Hardened Device
Submicron Channel
Floating Gate Storage
Electrically Programmable Logic
Multi-Level Metallization
Isolation Regions
Contact Openings
42 patents (USPTO):Explore Patents
1. 5089429 - Self-aligned emitter BiCMOS process (1992-02-18),
2. 4999691 - Integrated circuit with stacked MOS field effect transistors (1991-03-12),
3. 4975764 - High density BiCMOS circuits and methods of making same (1990-12-04),
4. 4945070 - Method of making cmos with shallow source and drain junctions (1990-07-31),
5. 4927777 - Method of making a MOS transistor (1990-05-22),
6. 4841347 - MOS VLSI device having shallow junctions and method of making same (1989-06-20),
7. 4797721 - Radiation hardened semiconductor device and method of making the same (1989-01-10),
8. 4764482 - Method of fabricating an integrated circuit containing bipolar and MOS (1988-08-16),
9. 4727515 - High density programmable memory array (1988-02-23),
10. 4716451 - Semiconductor device with internal gettering region (1987-12-29),
11. 4692992 - Method of forming isolation regions in a semiconductor device (1987-09-15),
12. 4675984 - Method of exposing only the top surface of a mesa (1987-06-30),
13. 4662064 - Method of forming multi-level metallization (1987-05-05),
14. 4660276 - Method of making a MOS field effect transistor in an integrated circuit (1987-04-28),
15. 4637836 - Profile control of boron implant (1987-01-20),

Title: The Innovative Journey of Inventor Sheng T Hsu

Introduction: Sheng T Hsu, a pioneering inventor based in Lawrenceville, NJ (US), has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Sheng T Hsu holds several patents in various technological domains, showcasing his continuous commitment to innovation and creativity.

Career Highlights: Throughout his illustrious career, Sheng T Hsu has been at the forefront of technological advancements, revolutionizing industries with his inventive solutions and forward-thinking approach.

Collaborations: Sheng T Hsu has collaborated with leading tech companies, research institutions, and universities, fostering a culture of innovation and knowledge sharing to drive progress in the field of technology.

Conclusion: Inventor Sheng T Hsu's relentless pursuit of innovation and his remarkable contributions to the technological landscape have solidified his position as a visionary inventor shaping the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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