The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 1991
Filed:
Dec. 22, 1989
Applicant:
Inventors:
Sheng T Hsu, West Windsor Township, Mercer County, NJ (US);
Doris W Flatley, Hillsborough Township, Somerset County, NJ (US);
Assignee:
General Electric Company, Schenectady, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 237 ; 357 42 ; 357 59 ;
Abstract
A structure and method for making a pair of MOS field effect transistors (MOSFETs), one stacked upon the other in an integrated circuit device is disclosed. In one embodiment of the device, the active layer of the upper MOSFET is epitaxially grown from an exposed surface of the active layer of the lower MOSFET. In another embodiment, the active layer of the upper MOSFET is polysilicon which, optionally, may be recrystallized. In all embodiments, the pair of MOSFETs share a common gate.