The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 1990
Filed:
Oct. 06, 1989
Sheng T Hsu, Lawrenceville, NJ (US);
Doris W Flatley, Belle Mead, NJ (US);
Harris Corporation, Melbourne, FL (US);
Abstract
A method of making a MOS transistor having source and drain extensions includes forming on a surface of a substrate of single crystalline silicon a gate line having a thin layer of silicon oxide between the gate line and the substrate surface. A light dose of ions of a desired conductivity type are embedded in the substrate surface at each side of the gate line up to the side walls of the gate line. Spacers of thermally grown silicon oxide are formed on the side walls of the gate line and a dose of the ions of the desired conductivity type are embedded into the substrate surface at each side of the gate line to form source and drain regions. The source and drain regions extend up to the spacers and have lightly doped extensions extending up to the side walls of the gate line under the spacers.