The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 1992
Filed:
Jun. 22, 1989
Applicant:
Inventor:
Sheng T Hsu, Lawrenceville, NJ (US);
Assignee:
David Sarnoff Research Center, Inc., Princeton, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 31 ; 437 57 ; 437162 ; 437238 ; 437978 ;
Abstract
A process is disclosed for forming bipolar transistors in a BiCMOS process which is fully compatible with the CMOS process used to form other devices in the same integrated circuit. The process produces bipolar transistor sizes which are compatible with the minimum size features and design rules of the CMOS process. A CVD silicon oxide layer to be used to form spacers is deposited on the top of emitter and gate electrodes covered with a first oxide layer.
Quick Actions:
Hsu, Sheng. (1992). Self-aligned emitter bicmos process (U.S. Patent No. 5089429). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5089429
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile