The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 1987
Filed:
Dec. 10, 1982
Applicant:
Inventors:
Sheng T Hsu, Lawrenceville, NJ (US);
Doris W Flatley, Belle Mead, NJ (US);
Assignee:
RCA Corporation, Princeton, NJ (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 42 ; 357 64 ; 357 91 ;
Abstract
A semiconductor device includes a substrate of single crystalline silicon having the active regions of a semiconductor element, such as the source, drain, channel and gates, along one surface of the substrate, and a thin gettering region of a gettering material in the substrate. The gettering region is spaced from both surfaces of the substrate and is adjacent the active regions of the semiconductor element so as to getter contaminants in the substrate from the area of the substrate containing the semiconductor element.