The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 1989
Filed:
Apr. 13, 1987
Sheng T Hsu, West Windsor Township, Mercer County, NJ (US);
General Electric Company, Schenectady, NY (US);
Abstract
An N-channel transistor formed in a layer of semiconductor material disposed on a insulating substrate is disclosed. The source region has a depth less than the thickness of the semiconductor layer so that a P-type region can be formed in the semiconductor layer between the source region and the insulating substrate. This P-type region has an impurity concentration sufficient to prevent the depletion region of the source from extending to the interface between the layer of semiconductor material and the substrate. The P-type region substantially prevents back-channel leakage currents from flowing between the source region and the drain region along the portion of the layer of semiconductor material immediately adjacent the insulating substrate when the device has been irradiated.