The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 1987
Filed:
Sep. 23, 1985
Applicant:
Inventors:
Doris W Flatley, Hillsboro Township, Somerset County, NJ (US);
Sheng T Hsu, W. Windsor Township, Mercer County, NJ (US);
Assignee:
RCA Corporation, Princeton, NJ (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148187 ; 29571 ; 2957 / ; 2957 / ; 357 91 ;
Abstract
The ion implantation of a silicon structure isolated from a semiconductor substrate by a layer of silicon dioxide with boron ions to render it p type conductive is improved by initially doping the silicon with phosphorus ions. The presence of the phosphorus ions in the silicon prevents the implanted boron ions from rapidly migrating into the silicon dioxide during annealing.