The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 1987
Filed:
Aug. 12, 1985
Sheng T Hsu, West Windsor Township, Mercer County, NJ (US);
RCA Corporation, Princeton, NJ (US);
Abstract
A method for making a MOS field effect transistor structure having tungsten silicide contact surfaces for the gate and source and drain regions is disclosed. Protective oxide is very precisely positioned so that a tungsten layer is formed on only selected silicon surfaces by selective deposition. Next, a layer of polysilicon is formed on said tungsten layer. The resulting structure is treated in an oxygen atmosphere to form the desired tungsten silicide. A silicon nitride cap can also be used to cover the gate portion during source and drain formation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile