Location History:
- Tokyo-To, JP (1998)
- Tokyo, JP (1991 - 2002)
Company Filing History:
16 out of 35,734 
1 out of 10,341 
1 out of 1 Years Active: 1991-2002
Title: The Innovations of Seiichi Shishiguchi
Introduction
Seiichi Shishiguchi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work has advanced the methods used in semiconductor fabrication, particularly in the development of MOSFET structures.
Latest Patents
One of his latest patents is a fabrication method of a semiconductor device using ion implantation. This method allows for the formation of shallow extensions of source and drain regions of a MOSFET with a double drain structure. The process involves several steps, including the formation of a gate electrode, ion implantation of dopants, and the creation of sidewall spacers. Another notable patent addresses the removal of metal contaminants from the surface of a silicon substrate by diffusion into the bulk during the formation of a gate oxide film.
Career Highlights
Seiichi Shishiguchi has worked with notable companies such as NEC Corporation and Tokyo Electron Limited. His experience in these organizations has contributed to his expertise in semiconductor manufacturing and innovation.
Collaborations
He has collaborated with esteemed colleagues, including Masao Mikami and Tatsuya Suzuki, further enhancing the impact of his work in the semiconductor industry.
Conclusion
Seiichi Shishiguchi's contributions to semiconductor technology through his patents and collaborations have significantly influenced the industry. His innovative methods continue to pave the way for advancements in semiconductor fabrication.