Seiichi Shishiguchi

This inventor holds 16 USPTO granted patents. Top assignees: Nec Corporation, Electron Tohoku Limited, Tokyo Electron Limited. Active years: 1991-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Seiichi Shishiguchi. Retrieved from https://idiyas.com/inventor/seiichi-shishiguchi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 16

% Patents Active = 100.0

Average Co-Inventor Count = 1.9

ph-index = 9

Forward Citations = 248(Granted Patents)

Location History:

Tokyo-To, JP (1998)
Tokyo, JP (1991 - 2002)

Company Filing History:

Electron Tohoku Limited

patent

1 out of 10,883

Tokyo Electron Limited

patents

where one patent can have more than one assignee

Years Active: 1991-2002

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16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6372591 - Fabrication method of semiconductor device using ion implantation (2002-04-16),

2. 6258635 - Removal of metal contaminants from the surface of a silicon substrate by diffusion into the bulk (2001-07-10),

3. 6190976 - Fabrication method of semiconductor device using selective epitaxial growth (2001-02-20),

4. 6017823 - Method of forming a MOS field effect transistor with improved gate side (2000-01-25),

5. 6010914 - Method for manufacturing a semiconductor device (2000-01-04),

6. 5972785 - Method for manufacturing a semiconductor device having a refractory (1999-10-26),

7. 5951774 - Cold-wall operated vapor-phase growth system (1999-09-14),

8. 5894037 - Silicon semiconductor substrate and method of fabricating the same (1999-04-13),

9. 5858853 - Method for forming capacitor electrode having jagged surface (1999-01-12),

10. 5821158 - Substrate surface treatment method capable of removing a spontaneous (1998-10-13),

11. 5798544 - Semiconductor memory device having trench isolation regions and bit (1998-08-25),

12. 5783257 - Method for forming doped polysilicon films (1998-07-21),

13. 5773357 - Method for producing silicon film to bury contact hole (1998-06-30),

14. 5543347 - Method of forming silicon film having jagged surface (1996-08-06),

15. 5470780 - Method of fabricating poly-silicon resistor (1995-11-28),

Title: The Innovations of Seiichi Shishiguchi

Introduction

Seiichi Shishiguchi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 16 patents. His work has advanced the methods used in semiconductor fabrication, particularly in the development of MOSFET structures.

Latest Patents

One of his latest patents is a fabrication method of a semiconductor device using ion implantation. This method allows for the formation of shallow extensions of source and drain regions of a MOSFET with a double drain structure. The process involves several steps, including the formation of a gate electrode, ion implantation of dopants, and the creation of sidewall spacers. Another notable patent addresses the removal of metal contaminants from the surface of a silicon substrate by diffusion into the bulk during the formation of a gate oxide film.

Career Highlights

Seiichi Shishiguchi has worked with notable companies such as NEC Corporation and Tokyo Electron Limited. His experience in these organizations has contributed to his expertise in semiconductor manufacturing and innovation.

Collaborations

He has collaborated with esteemed colleagues, including Masao Mikami and Tatsuya Suzuki, further enhancing the impact of his work in the semiconductor industry.

Conclusion

Seiichi Shishiguchi's contributions to semiconductor technology through his patents and collaborations have significantly influenced the industry. His innovative methods continue to pave the way for advancements in semiconductor fabrication.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]