The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 1996
Filed:
Dec. 27, 1994
Applicant:
Inventors:
Hideo Kawano, Tokyo, JP;
Keiji Shiotani, Tokyo, JP;
Masao Mikami, Tokyo, JP;
Tatsuya Suzuki, Tokyo, JP;
Seiichi Shishiguchi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 60 ; 437919 ; 437200 ; 437977 ; 148D / ;
Abstract
First, a metal layer is deposited on a silicon film surface to form a silicide layer in an interface between the silicon film and the metal layer. Subsequently, the metal layer is all removed by etching such that silicide islands are left on the surface of the silicon film, and then the exposed silicon film surface is dry-etched by using the silicide islands as a selective mask.