The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 1998
Filed:
May. 29, 1997
Seiichi Shishiguchi, Tokyo-To, JP;
Kazuhide Hasebe, Yamanashi-Ken, JP;
Nobuaki Shigematsu, Yamanashi-Ken, JP;
Tokyo Electron Limited, Tokyo, JP;
Electron Tohoku Limited, Tokyo-To, JP;
NEC Corporation, Iwate-ken, JP;
Abstract
A number of wafers are loaded into a reaction vessel on a wafer boat; monosilane gas, phosphine gas and N.sub.2 O gas are supplied to form amorphous silicon film doped with, e.g., phosphorus; and then the wafers are annealed in, e.g., a different reaction tube to polycrystallize the amorphous silicon film. Os (Oxygen) generated by decomposition of N.sub.2 O are taken into the film. The Os become nuclei of the silicon crystals, and the crystals become fine and have size uniformity. As a result, high uniformity of resistance values of micronized devices of the polysilicon film can be obtained. Resistance values of the polysilicon film can be easily controlled by addition of oxygen. As a result, high uniformity of resistance values of micronized devices of the polysilicon film can be obtained.