Location History:
- Yamanashi-Ken, JP (1998)
- Yamanashi, JP (2002)
Company Filing History:
Years Active: 1998-2002
Title: Nobuaki Shigematsu: Innovator in Silicon Technology
Introduction
Nobuaki Shigematsu is a prominent inventor based in Yamanashi-Ken, Japan. He has made significant contributions to the field of silicon technology, holding two patents that showcase his innovative approaches to film formation methods.
Latest Patents
Shigematsu's latest patents include a silicon nitride film formation method and a method for forming doped polysilicon films. In the silicon nitride film formation method, a substrate is heated, and silicon tetrachloride and ammonia gases are supplied to the substrate at a predetermined temperature. The ratio of the partial pressure of silicon tetrachloride gas to that of ammonia gas is set to not less than 0.5. The method for forming doped polysilicon films involves loading multiple wafers into a reaction vessel on a wafer boat. Monosilane gas, phosphine gas, and N2O gas are supplied to form an amorphous silicon film doped with phosphorus. The wafers are then annealed in a different reaction tube to polycrystallize the amorphous silicon film. Oxygen generated by the decomposition of N2O is incorporated into the film, which helps in controlling the resistance values of the polysilicon film, leading to high uniformity of resistance values in micronized devices.
Career Highlights
Throughout his career, Nobuaki Shigematsu has worked with notable companies such as Tokyo Electron Limited and Electron Tohoku Limited. His work has significantly impacted the semiconductor industry, particularly in the development of advanced silicon materials.
Collaborations
Shigematsu has collaborated with esteemed colleagues, including Keizo Hosoda and Yusuke Muraki. These collaborations have further enhanced his contributions to the field of silicon technology.
Conclusion
Nobuaki Shigematsu is a distinguished inventor whose work in silicon technology has led to innovative methods that improve the quality and uniformity of silicon films. His patents reflect a deep understanding of material science and engineering, making him a valuable figure in the industry.