Yamanashi, Japan

Kazuhide Hasebe

This inventor holds 2 USPTO granted patents. Top assignees: Tokyo Electron Limited, Electron Tohoku Limited, Nec Corporation. Active years: 1997-1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kazuhide Hasebe. Retrieved from https://idiyas.com/inventor/kazuhide-hasebe-w29j2n98

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 1997-1998

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2 patents (USPTO):Explore Patents

Title: Kazuhide Hasebe: Innovator in Semiconductor Technology

Introduction

Kazuhide Hasebe is a notable inventor based in Yamanashi-ken, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the formation of silicon films and doped polysilicon films. With a total of two patents to his name, Hasebe's work has implications for the manufacturing of micronized devices.

Latest Patents

Hasebe's latest patents include a method for forming doped polysilicon films and a method for forming silicon films. The method for forming doped polysilicon films involves loading a number of wafers into a reaction vessel on a wafer boat. Monosilane gas, phosphine gas, and N.sub.2 O gas are supplied to create an amorphous silicon film doped with phosphorus. The wafers are then annealed in a different reaction tube to polycrystallize the amorphous silicon film. Oxygen generated by the decomposition of N.sub.2 O is incorporated into the film, serving as nuclei for silicon crystals, which enhances the uniformity of resistance values in micronized devices. The second patent, a method for forming silicon films, retains semiconductor wafers in a wafer boat, which is then loaded into a process tube of a vertical thermal processing apparatus. The process tube is heated to temperatures between 300°C and 530°C in a depressurized atmosphere, while a disilane gas flows at a rate of 300 SCCM or more to form silicon films.

Career Highlights

Hasebe has worked with prominent companies in the semiconductor industry, including Tokyo Electron Limited and Electron Tohoku Limited. His experience in these organizations has contributed to his expertise in semiconductor manufacturing processes.

Collaborations

Hasebe has collaborated with notable coworkers such as Seiichi Shishiguchi and Nobuaki Shigematsu. Their collective efforts have further advanced the field of semiconductor technology.

Conclusion

Kazuhide Hasebe's innovative work in semiconductor technology, particularly in the formation of silicon films, has made a significant impact on the industry. His patents reflect a deep understanding of the processes involved in creating high-quality semiconductor materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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