The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
Oct. 01, 1998
Applicant:
Inventors:
Kousuke Miyoshi, Tokyo, JP;
Seiichi Shishiguchi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1335 ; H01L 2/1322 ;
U.S. Cl.
CPC ...
H01L 2/1335 ; H01L 2/1322 ;
Abstract
A method of manufacturing a semiconductor device has a step whereby, when forming a gate oxide film, a thin oxide film is left on a silicon substrate onto which it is formed and whereby a heavy metal at the surface of the silicon substrate is diffused into the substrate, and a step of forming a gate oxide film onto the silicon substrate.
Miyoshi, Kousuke. (2001). Removal of metal contaminants from the surface of a silicon substrate by diffusion into the bulk (U.S. Patent No. 6258635). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6258635
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile