The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 1998
Filed:
Jan. 25, 1996
Seiichi Shishiguchi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of forming a silicon-based thin film for burying contact holes having a high aspect ratio is disclosed. The method comprises the steps of forming contact holes in an insulating film provided on a semiconductor substrate, and growing a silicon-based (silicon or silicon alloys) film containing impurities by Chemical Vapor Deposition to bury the contact holes. The growth is performed by simultaneously feeding a material gas for forming the silicon-based film and an etching gas for etching the silicon-based film, where the material gas is fed under surface reaction limiting conditions to equalize gas concentrations inside and outside said contact holes, and the etching gas is fed under supply rate limiting conditions to make the gas concentration outside the contact hole higher than that at the bottom of the contact hole.