The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 1995
Filed:
Sep. 01, 1994
Applicant:
Inventor:
Seiichi Shishiguchi, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 60 ; 437 82 ; 437918 ; 148D / ;
Abstract
The method of fabricating a poly-silicon resistor includes a step for providing a dopant gas and a nitrous oxide gas as well as a silane gas to thereby deposit a silicon layer on a substrate by chemical vapor deposition under a deposition temperature not higher than 600 degrees centigrade so that the silicon layer includes the dopant of the dopant gas and oxygen, and a step for annealing the silicon layer under a temperature not lower than 600 degrees centigrade.