The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2000
Filed:
Oct. 28, 1997
Seiichi Shishiguchi, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device comprises the steps of forming consecutively a silicon oxide layer and a test epitaxial layer in a test pattern area on a silicon wafer, forming an epitaxial layer in a product area for semiconductor devices and on the test epitaxial layer simultaneously, measuring a total thickness of the epitaxial layer and the test epitaxial layer formed in the test pattern area by infrared interference, and determining the thickness of the epitaxial layer formed in the product area based on the total thickness to control the thickness of the epitaxial layer in the product area. A thickness control for a very thin epitaxial layer can be obtained.