Saumitra Raj Mehrotra

USPTO Granted Patents = 21 (Patent Applications = 5)

Average Co-Inventor Count = 2.6

ph-index = 3

Forward Citations = 15(Granted Patents)

Company Filing History:

Years Active: 2019-2025

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21 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12501632 - Semiconductor device with improved mechanical stress resistance (2025-12-16),

2. 12057499 - Transistor devices with termination regions (2024-08-06),

3. 11961907 - Laterally-diffused metal-oxide semiconductor transistor and method therefor (2024-04-16),

4. 11777002 - Laterally-diffused metal-oxide semiconductor transistor and method therefor (2023-10-03),

5. 11640997 - Buried Zener design (2023-05-02),

6. 11515416 - Laterally-diffused metal-oxide semiconductor transistor and method therefor (2022-11-29),

7. 11387348 - Transistor formed with spacer (2022-07-12),

8. 11329156 - Transistor with extended drain region (2022-05-10),

9. 11227921 - Laterally-diffused metal-oxide semiconductor transistor and method therefor (2022-01-18),

10. 11217675 - Trench with different transverse cross-sectional widths (2022-01-04),

11. 11075110 - Transistor trench with field plate structure (2021-07-27),

12. 10833174 - Transistor devices with extended drain regions located in trench sidewalls (2020-11-10),

13. 10749028 - Transistor with gate/field plate structure (2020-08-18),

14. 10749023 - Vertical transistor with extended drain region (2020-08-18),

15. 10672903 - Semiconductor device with drain active area (2020-06-02),

Title: Saumitra Raj Mehrotra: Innovator in Semiconductor Technology

Introduction

Saumitra Raj Mehrotra, based in Scottsdale, Arizona, is a prominent inventor in the field of semiconductor technology, holding an impressive 20 patents. His work focuses on advancements that bridge gaps in transistor device efficiency and functionality, showcasing his commitment to innovation in the tech industry.

Latest Patents

Some of Mehrotra's latest patents highlight significant advancements in transistor devices. One notable patent describes a transistor device featuring termination regions, which includes a substrate and distinct current-carrying regions. This design integrates a trench structure that enhances performance by managing the electrical characteristics efficiently. Another patent, focused on laterally-diffused metal-oxide semiconductor transistors, outlines a unique configuration involving a conductive spacer and dielectric materials designed to optimize transistor functionality. These innovations exemplify Mehrotra's expertise in enhancing semiconductor technology.

Career Highlights

Throughout his career, Saumitra Raj Mehrotra has contributed to major companies, including NXP USA, Inc. and NXP B.V. His tenure at these establishments has enabled him to refine his skills and develop groundbreaking technologies that have the potential to revolutionize the semiconductor industry.

Collaborations

Mehrotra has had the privilege of working alongside notable colleagues, including Ljubo Radic and Bernhard Grote. These collaborations have facilitated the exchange of ideas and fostered an innovative environment, further enhancing his contributions to semiconductor technology.

Conclusion

Saumitra Raj Mehrotra stands out as a significant figure in the invention and innovation landscape of semiconductor devices. With 20 patents to his name, his contributions continue to shape the future of technology, providing solutions that push the boundaries of what is possible in the industry. His ongoing work reflects a dedication to excellence and the pursuit of advancements that will benefit future generations.

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