The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Dec. 16, 2019
Applicant:
Nxp Usa, Inc., Austin, TX (US);
Inventors:
Saumitra Raj Mehrotra, Scottsdale, AZ (US);
Ljubo Radic, Gilbert, AZ (US);
Bernhard Grote, Phoenix, AZ (US);
Assignee:
NXP USA, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 21/3213 (2006.01); H01L 29/45 (2006.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7825 (2013.01); H01L 21/32137 (2013.01); H01L 29/0865 (2013.01); H01L 29/0882 (2013.01); H01L 29/1033 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/6656 (2013.01); H01L 29/66704 (2013.01); H01L 21/26513 (2013.01); H01L 29/0688 (2013.01); H01L 29/1095 (2013.01); H01L 29/456 (2013.01); H01L 29/665 (2013.01);
Abstract
A transistor device having a channel region including a portion located in a sidewall of semiconductor material of a trench and an extended drain region including a portion located in a lower portion of the semiconductor material of the trench. In one embodiment, a control terminal of the transistor device is formed by patterning a layer of control terminal material to form a sidewall in the trench and a field plate for the transistor device is formed by forming a conductive sidewall spacer structure along the sidewall of the control terminal material.