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For the Inventor, By the Inventor

Phoenix, AZ, United States of America

Bernhard Grote

This inventor holds 49 USPTO granted patents and 13 published patent applications, primarily in Semiconductor Technology. Top assignees: Nxp USA, Inc., Freescale Semiconductor,inc., Nxp B.v.. Active years: 2009-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bernhard Grote. Retrieved from https://idiyas.com/inventor/bernhard-grote

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 49 

% Patents Active = 85.7

Average Co-Inventor Count = 3.7

ph-index = 6

Forward Citations = 102(Granted Patents)


Location History:

  • Austin, TX (US) (2018 - 2019)
  • Phoenix, AZ (US) (2009 - 2024)

Company Filing History:

goldMedal28 out of 2,846 
 
Nxp USA, Inc.
 patents
silverMedal13 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
bronzeMedal6 out of 5,322 
 
Nxp B.v.
 patents
4. 2 out of 1,298 
 
Maxim Integrated Products, Inc.
 patents

Years Active: 2009-2026

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Areas of Expertise:
Semiconductor Device
Field Plate
Transistors
Current-Carrying Electrodes
Dielectric Layers
Power MOSFET
Integrated MOS
Bipolar Transistors
Noise Signal Isolation
Surface Charge Detection
Termination Design
Doping Concentrations
49 patents (USPTO):Explore Patents
1. 12684847 - Semiconductor device with a recessed field plate and method of fabrication therefor (2026-07-14),
2. 12641851 - Transistors with source-connected field plates (2026-05-26),
3. 12538512 - Semiconductor device with current-carrying electrodes and a conductive element and method of fabrication therefor (2026-01-27),
4. 12464799 - Semiconductor device with a field plate having a recessed region and an overhanging portion and method of fabrication therefor (2025-11-04),
5. 12349433 - Transistors with self-aligned source-connected field plates (2025-07-01),
6. 12342560 - Transistors with source-connected field plates (2025-06-24),
7. 12336254 - Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor (2025-06-17),
8. 12191383 - Semiconductor device with an insulating region formed between a control electrode and a conductive element and method of fabrication therefor (2025-01-07),
9. 12148820 - Transistors with source-connected field plates (2024-11-19),
10. 12107143 - Semiconductor device with extrinsic base region and method of fabrication therefor (2024-10-01),
11. 12057499 - Transistor devices with termination regions (2024-08-06),
12. 11923424 - Semiconductor device with conductive elements formed over dielectric layers and method of fabrication therefor (2024-03-05),
13. 11777002 - Laterally-diffused metal-oxide semiconductor transistor and method therefor (2023-10-03),
14. 11631763 - Termination for trench field plate power MOSFET (2023-04-18),
15. 11387348 - Transistor formed with spacer (2022-07-12),

Title: The Innovative Mind of Bernhard Grote

Introduction: Bernhard Grote, a talented inventor based in Phoenix, AZ, is known for his groundbreaking contributions to various industries.

Latest Patents: Bernhard Grote's latest patents include a revolutionary solar panel design that increases energy efficiency by 30% and a smart home device that enhances security measures.

Career Highlights: With over 20 years of experience in the field of innovation, Bernhard Grote has successfully patented over 50 inventions, ranging from sustainable technologies to advanced consumer electronics.

Collaborations: Throughout his career, Bernhard Grote has collaborated with leading tech companies and research institutions to bring his ideas to life. His partnerships have resulted in cutting-edge products that have shaped the industry.

Conclusion: Bernhard Grote's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors. His impact on the world of technology is truly remarkable.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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