The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Dec. 20, 2021
Applicant:
Nxp Usa, Inc., Austin, TX (US);
Inventors:
Congyong Zhu, Gilbert, AZ (US);
Anthony Ciancio, Gilbert, AZ (US);
Fred Reece Clayton, Mesa, AZ (US);
Lawrence Scott Klingbeil, Chandler, AZ (US);
Bernhard Grote, Phoenix, AZ (US);
Assignee:
NXP USA, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/015 (2025.01); H10D 30/471 (2025.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01); H10D 64/111 (2025.01);
Abstract
Placement of a field plate in a field-effect transistor is optimized by using multiple dielectric layers such that a first end of field plate is separated from a channel region of the transistor by a first set of one or more distinct dielectric material layers. A second end of the field plate overlies the channel region and a gate electrode from which it is separated by the first set of dielectric layers and one or more additional dielectric layers.