The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Aug. 09, 2022
Nxp B.v., Eindhoven, NL;
Ljubo Radic, Gilbert, AZ (US);
Richard Emil Sweeney, Chandler, AZ (US);
Vikas Shilimkar, Chandler, AZ (US);
Bernhard Grote, Phoenix, AZ (US);
Darrell Glenn Hill, Chandler, AZ (US);
Ibrahim Khalil, Gilbert, AZ (US);
NXP B.V., Eindhoven, NL;
Abstract
A transistor includes a semiconductor substrate, a channel region on a top surface of the semiconductor substrate, first and second current terminals with first and second contacts at a top surface of the channel region, a gate electrode between the first and second contacts, and a cooling trench. The cooling trench is coupled to the first current terminal, and the cooling trench extends laterally from a first end of the cooling trench to a second end of the cooling trench along a first direction that is parallel to the top surface of the substrate. The cooling trench also extends vertically from the first current terminal through the channel region, through the top surface of the semiconductor substrate and toward, but not to, the backside of the semiconductor substrate. The cooling trench is filled throughout with a thermally-conductive material configured to dissipate heat from the channel region into the semiconductor substrate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile